| PART |
Description |
Maker |
| CM1200HG-66H09 |
HVIGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Semiconductor
|
| CM1200HA-34H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
|
Mitsubishi Electric Corporation
|
| CM600HB-90H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
|
Mitsubishi Electric Corporation
|
| CM400HB-90H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
|
Mitsubishi Electric Corporation
|
| CM800E2C-66H |
2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
|
Mitsubishi Electric Semiconductor
|
| CM400HB-90H |
2nd-Version HVIGBT Modules
|
Mitsubishi Electric
|
| CM400HG-66H |
3rd-Version HVIGBT Modules
|
Mitsubishi Electric
|
| MDO500 MDO500-12N1 MDO500-14N1 MDO500-16N1 MDO500- |
High Power Diode Modules
High Power Diode Modules 560 A, 1400 V, SILICON, RECTIFIER DIODE
High Power Diode Modules 大功率二极管模块
|
IXYS[IXYS Corporation]
IXYS, Corp.
|
| TM90RZ-24 TM90RZ-2H TM90EZ-24 TM90EZ-2H |
THYRISTOR MODULES HIGH VOLTAGE HIGH POWER GENERAL USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|
| MDD220-18N1 MDD220 MDD220-08N1 MDD220-12N1 MDD220- |
High Power Diode Modules
Thyristor and Rectifiers Modules
|
IXYS[IXYS Corporation]
|
| RM50C1A-XXS RM50DA-C1A-XXS RM50DA/CA/C1A-XXS RM50C |
FAST RECOVERY DIODE MODULES MEDIUM POWER, HIGH FREQUENCY USE INSULATED TYPE
Fast Recovery Diode Modules, F Series (for IGBT speed switching)
MEDIUM POWER/ HIGH FREQUENCY USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|
